| производитель | номер детали | датащи | подробное описание детали |
 Samsung semiconductor |
DS_K7M323625M
|
211Kb / 18P |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
 Integrated Circuit Solu... |
IC61SF25632T
|
476Kb / 19P |
8Mb SyncBurst Flow through SRAM
|
 Integrated Silicon Solu... |
IS61LF102436A
|
420Kb / 20P |
36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
 Samsung semiconductor |
K7M163635B
|
394Kb / 19P |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
|
K7M323635C
|
391Kb / 19P |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
|
K7M803625B
|
395Kb / 19P |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
 New Jersey Semi-Conduct... |
2N3925
|
209Kb / 2P |
NPN SILICON ANNULAR
|
 Honeywell Accelerometer... |
26PCBFD2G
|
238Kb / 3P |
Gage Unamplified Compensated Flow-Through
|
 Unisonic Technologies |
UESD4CUSB30G-AF5-R
|
133Kb / 4P |
Flow-Through Pin Mapping
|
 Amphenol Corporation |
GE-2102
|
324Kb / 4P |
Inline Flow-Through Fluid Temperature Sensor
|