 Features
 AEC-Q100 Grade 1 qualified
 6 V to 28 V (40 V abs. max) operating range
 Configurable source/sink current from 1 mA to
100 mA with 32 steps
 Adaptive MOSFET gate control
− Improved electromagnetic emission
− Reduced switching losses in PWM mode
 Two current sense amplifiers
− Configurable gain settings
− Supports high side, low side or inline
 Four PWM inputs
− High side and low side PWM
− Active free-wheeling
− Up to 100 kHz PWM frequency
 Supports two different power supplies for
half-bridges
 Control of reverse battery protection MOSFET
 Complete protections and diagnostics
− VDS monitor for every MOS
− Complete off-state diagnostic: open load,
short to battery, short to GND
− Overtemperature warning and shutdown
− Timeout watchdog with configurable period
settings (10, 50, 100, 200 ms)
− Supply undervoltage monitor
− Supply overvoltage monitor both in active
and passive mode
− Cross current protection
 Configurable low-side 1-4 brake with short
circuit detection both in sleep and normal mode
 Applications
 Automotive brushed DC motors
 Zone control unit
 Power seat modules
 Power lift gate
 Power sunroof
 Description
The DIA58104 are multi-channel NMOS gate drivers
which can drive up to 8 MOSFETs. The device can
be used as 4ch half-bridges for driving DC motor
control applications, and they can also be used as
independent high side or low side drivers for wider
automotive applications.
EMC performance can be well tuned by adjustable
slew rate with independence from dead-time and
turn on/off delays. The on-board measurement and
self-adaption of external MOSFET switching times
allows balancing of power dissipation and EMC
performance.
The DIA58104 integrates complete diagnostics and
protections, where brake protection greatly
enhances system reliability. This function allows the
motor to enter permanent brake mode to avoid
unintended movement of the motor. It can also
protect against supply overvoltage caused by motor
working in generator mode to protect the system.
The 24-bit SPI interface allows more flexible device
configuration and fault observability.
For A version, DIA58104 can separately configure
the Drain-source overvoltage threshold for the
high-side and low-side MOSFETs of a half bridge,
and it can also support the independent control
mode which is friendly for high-side switch
application.