1. General description
Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge
configuration), using NextpowerS3 technology.
An internal connection is made between the source (S1) of the high-side
FET to the drain (D2) of the low-side FET, making the device ideal to use
as a half-bridge switch in high-performance PWM and space constrained
motor drive applications
aaa-028081
D1
S1, D2
S2
G1
G2
2. Features and benefits
• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• Module shrinkage through reduced component count
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package
• NextpowerS3 technology
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated
• LFPAK copper clip packaging provides high robustness and reliability
• Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
3. Applications
• Handheld power tools, portable appliance and space constrained applications
• Brushless or brushed DC motor drive
• DC-to-DC systems
• LED lighting