Features
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant

General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.

Applications
VRM Vcore Switching for Desktop and Server
OringFET / Load Switching
DC-DC Conversion
Motor Bridge Switch