FEATURES
· High-Bandwidth Data Path (up to 500 MHz (1))
· 5-V-Tolerant I/Os With Device Powered Up or
Powered Down
· Low and Flat ON-State Resistance (ron)
Characteristics Over Operating Range
(ron = 4 W Typ)
· Rail-to-Rail Switching on Data I/O Ports
– 0- to 5-V Switching With 3.3-V VCC
– 0- to 3.3-V Switching With 2.5-V V CC
· Bidirectional Data Flow With Near-Zero
Propagation Delay
· Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(Cio(OFF) = 4 pF Typ)
· Fast Switching Frequency (fOE = 20 MHz Max)
· Data and Control Inputs Provide Undershoot
Clamp Diodes
· Low Power Consumption (ICC = 0.7 mA Typ)
· VCC Operating Range From 2.3 V to 3.6 V
· Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
· Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
· Ioff Supports Partial-Power-Down Mode
Operation
· Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
· ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
· Supports Both Digital and Analog
Applications: Differential Signal Interface,
Memory Interleaving, Bus Isolation,
Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION
The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of
the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows
for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device
also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized
interface solution ideally suited for broadband communications, networking, and data-intensive computing
systems.
The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is
high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow
between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists
between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is
determined by the current-sinking/current-sourcing capability of the driver.