Features
Max rDS(on) = 366mΩ at VGS = 10V, ID = 1.0A
Typ Qg = 12.7nC at VGS = 10V
Low Miller charge
Low Qrr Body Diode
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse)
RoHS Compliant

General Description
UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Application
DC/DC converters and Off-Line UPS
Distributed Power Architectures