1 Features
1• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
• 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
• 2.5-A Peak Source and 5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 3-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Isolation Surge Withstand Voltage 12800-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 2121-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete

2 Applications
• Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating

3 Description
The ISO5851-Q1 is a 5.7-kVRMS, reinforced isolated
gate driver for IGBTs and MOSFETs with 2.5-A
source and 5-A sink current. The input side operates
from a single 3-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of
the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect, the gate driver
output is driven low to VEE2 potential, turning the
IGBT immediately off.
When desaturation is active, a fault signal is sent
across the isolation barrier, pulling the FLT output at
the input side low and blocking the isolator input. The
FLT output condition is latched and can be reset
through a low-active pulse at the RST input.