1 Features
• Low On-Resistance
• Ultra-Low Qg and Qgd
• High-operating drain current
• Ultra-small footprint
– 0.73 mm × 0.64 mm
• Ultra-low profile
– 0.36-mm max height
• Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
• Lead and halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Battery applications
• Handheld and mobile applications

3 Description
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing a substantial
reduction in footprint size.