DESCRIPTION
The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching structures.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 15:1 VSWR CAPABILITY
■ LOW RF THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 30 W MIN. WITH 7.8 dB GAIN