1 Features
1• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B
• 600-mA Rated Drain Current (Per Channel)
• CMOS Pin-to-Pin Improvement of 7-channel
Darlington Array (For Example: ULN2003A)
• Power Efficient (Very low VOL)
– Less Than 4 Times Lower VOL at 100 mA Than
Darlington Array
• Very Low Output Leakage < 10 nA Per Channel
• High-Voltage Outputs 30 V
• Compatible with 1.8-V to 5-V Microcontroller and
Logic Interface
• Internal Free-wheeling Diodes for Inductive Kickback
Protection
• Input Pull-down Resistors Allows Tri-stating the
Input Driver
• Input RC-Snubber to Eliminate Spurious
Operation in Noisy Environment
• ESD Protection Exceeds JESD 22
– 2-kV HBM, 500-V CDM

2 Applications
• Inductive Loads
– Relays
– Unipolar Stepper and Brushed DC Motors
– Solenoids and Valves
• LEDs
• Logic Level Shifting
• Gate and IGBT Drive

3 Description
The TPL7407LA-Q1 is a high-voltage, high-current
NMOS transistor array. This device consists of seven
NMOS transistors that feature high-voltage outputs
with common-cathode clamp diodes for switching
inductive loads. The maximum drain-current rating of
a single NMOS channel is 600 mA. New regulation
and drive circuitry added to give maximum drive
strength across all GPIO ranges (1.8 V–5 V).The
transistors can be paralleled for higher current
capability.
The TPL7407LA-Q1 key benefit is its improved power
efficiency and lower leakage than a Bipolar Darlington
Implementation. With the lower VOL the user is
dissipating less than half the power than traditional
relay drivers with currents less than 250 mA per
channel.