General Description
The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD608 is Pb-free (meets ROHS & Sony 259 specifications).

Features
   n-channel                        p-channel
   VDS (V) = 40V                -40V
   ID = 10A (VGS=10V)      -10A (V GS = -10V)
   RDS(ON)                        RDS(ON)
   < 39 mΩ (VGS=10V)      < 51 mΩ (VGS = -10V)
   < 50 mΩ (VGS=4.5V)     < 75 mΩ (VGS = -4.5V)

   ESD rating: 3000V (HBM)