1FEATURES
• 9-GHz Bandwidth
• 10-kΩ Differential Small Signal
Transimpedance
• –20-dBm Sensitivity
• 0.9-μARMS Input Referred Noise
• 2.5-mAp-p Input Overload Current
• Received Signal Strength Indication (RSSI)
• 92-mW Typical Power Dissipation
• CML Data Outputs With On-Chip 50-Ω Back-
Termination
• On Chip Supply Filter Capacitor
• Single +3.3-V Supply
• Die Size: 870 μm x 1036 μm

APPLICATIONS
• 10-G Ethernet
• 8-G and 10-G Fibre Channel
• 10-G EPON
• SONET OC-192
• 6-G and 10-G CPRI and OBSAI
• PIN and APD Preamplifier-Receivers

DESCRIPTION
The ONET8551T device is a high-speed, high-gain,
limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features
low-input referred noise, 9-GHz bandwidth, 10-kΩ
small signal transimpedance, and a received signal
strength indicator (RSSI).
The ONET8551T device is available in die form,
includes an on-chip VCC bypass capacitor, and is
optimized for packaging in a TO can.
The ONET8551T device requires a single +3.3-V
supply. The power-efficient design typically dissipates
less than 95 mW. The device is characterized for
operation from –40°C to 100°C case (IC back-side)
temperature.