1 Features
1• Independently Drives Two N-Channel MOSFETs
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 5A sink/3A Source Current Capability
• Two Channels can be Connected in Parallel to
Double the Drive Current
• Independent Inputs (TTL Compatible)
• Fast Propagation Times (25-ns Typical)
• Fast Rise and Fall Times (14-ns/12-ns Rise/Fall
With 2-nF Load)
• Dedicated Input Ground Pin (IN_REF) for Split
Supply or Single Supply Operation
• Outputs Swing from VCC to VEE Which Can Be
Negative Relative to Input Ground
• Available in Dual Noninverting, Dual Inverting and
Combination Configurations
• Shutdown Input Provides Low Power Mode
• Supply Rail Undervoltage Lockout Protection
• Pin-Out Compatible With Industry Standard Gate
Drivers
• Packages:
– SOIC-8
– WSON-10 (4 mm × 4 mm)

2 Applications
• Synchronous Rectifier Gate Drivers
• Switch-Mode Power Supply Gate Driver
• Solenoid and Motor Drivers

3 Description
The LM5110 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each “compound” output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5A peak from
capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Separate input and output ground pins provide
Negative Drive Capability allowing the user to drive
MOSFET gates with positive and negative VGS
voltages. The gate driver control inputs are
referenced to a dedicated input ground (IN_REF).
The gate driver outputs swing from VCC to the output
ground VEE which can be negative with respect to
IN_REF. Undervoltage lockout protection and a
shutdown input pin are also provided. The drivers can
be operated in parallel with inputs and outputs
connected to double the drive current capability. This
device is available in the SOIC-8 and the thermallyenhanced
WSON-10 packages.