1 Features
• LM5112-Q1 is Qualified for Automotive
Applications
• AEC-Q100 Grade 1 Qualified
• Manufactured on an Automotive Grade Flow
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 7-A Sink and 3-A Source Current
• Fast Propagation Times: 25 ns (Typical)
• Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load
• Inverting and Non-Inverting Inputs Provide Either
Configuration With a Single Device
• Supply Rail Undervoltage Lockout Protection
• Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation
• Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package
• Output Swings From VCC to VEE Which Are
Negative Relative to Input Ground

2 Applications
• DC to DC Switch-Mode Power Supplies
• AC to DC Switch-Mode Power Supplies
• Solar Microinverters
• Solenoid and Motor Drives

3 Description
The LM5112 device MOSFET gate driver provides
high peak gate drive current in the tiny 6-pin WSON
package (SOT-23 equivalent footprint) or an 8-pin
exposed-pad MSOP package with improved power
dissipation required for high frequency operation. The
compound output driver stage includes MOS and
bipolar transistors operating in parallel that together
sink more than 7 A peak from capacitive loads.
Combining the unique characteristics of MOS and
bipolar devices reduces drive current variation with
voltage and temperature. Undervoltage lockout
protection is provided to prevent damage to the
MOSFET due to insufficient gate turnon voltage. The
LM5112 device provides both inverting and noninverting
inputs to satisfy requirements for inverting
and non-inverting gate drive with a single device type.