1 Features
1• Drives Both a High-Side and Low-Side N-Channel
MOSFET
• 1.8-A Peak Gate Drive Current
• Bootstrap Supply Voltage Range up to 118-V DC
• Integrated Bootstrap Diode
• Single TTL Compatible Input
• Programmable Turnon Delays (Dead Time)
• Enable Input Pin
• Fast Turnoff Propagation Delays (26 ns Typical)
• Drives 1000 pF With 15-ns Rise and Fall Time
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• Package: Thermally Enhanced 10-Pin WSON
(4 mm × 4 mm)

2 Applications
• Solid-State Motor Drives
• Half- and Full-Bridge Power Converters

3 Description
The LM5105 is a high-voltage gate driver designed to
drive both the high-side and low-side N–Channel
MOSFETs in a synchronous buck or half-bridge
configuration. The floating high-side driver is capable
of working with rail voltages up to 100 V. The single
control input is compatible with TTL signal levels and
a single external resistor programs the switching
transition dead time through tightly matched turnon
delay circuits. A high-voltage diode is provided to
charge the high-side gate-drive bootstrap capacitor.
The robust level shift technology operates at high
speed while consuming low power and provides clean
output transitions. Undervoltage lockout disables the
gate driver when either the low-side or the
bootstrapped high-side supply voltage is below the
operating threshold. The LM5105 is offered in the
thermally enhanced WSON plastic package.