Features
· HSDIP20 package
with the 4th Generation SiC-MOSFET
· VDSS = 1200V
· Low RDS(on)
· High-speed switching possible
· Low switching losses
· Tvjmax = 175°C
· Compact design
· With high thermal conductivity isolation
· Integrated NTC temperature sensor
· 4.2kV AC 1s insulation