Features
• Very low rDS(ON) 3.5mΩ (typical)
• Ultra low total gate charge 19nC (typical)
• ISL70020SEH radiation acceptance testing
○ High dose rate (50-300rad(Si)/s): 100krad(Si)
○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
• ISL73020SEH radiation acceptance testing
○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
• SEE hardness (see the SEE report for details)
○ SEL/SEB LETTH (VDS = 40V, VGS = 0V):
86.4MeV•cm2/mg(Si)
• Ultra small hermetically sealed 4 Ld Surface Mount
Device (SMD) package
○ Package area: 42mm2
• Full military-temperature range operation
○ TA = -55°C to +125°C
○ TJ = -55°C to +150°C
• Qualified to Renesas Rad Hard GaN FET
Screening and QCI Flow (R34TB0003EU)
○ All screening and QCI are in accordance with
MIL-PRF-38535L Class-V