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IS43/46DR16640B/L датащи (PDF) - Integrated Silicon Solution, Inc

IS43/46DR16640B/L Datasheet PDF - Integrated Silicon Solution, Inc
номер детали IS43/46DR16640B/L
скачать  IS43/46DR16640B/L скачать
объем файла   548.81 Kbytes
Page   28 Pages
производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
подробное описание детали 1Gb (x8, x16) DDR2 SDRAM

IS43/46DR16640B/L Datasheet (PDF)

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IS43/46DR16640B/L Datasheet PDF - Integrated Silicon Solution, Inc

номер детали IS43/46DR16640B/L
скачать  IS43/46DR16640B/L Click to download

объем файла   548.81 Kbytes
Page   28 Pages
производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
подробное описание детали 1Gb (x8, x16) DDR2 SDRAM

IS43/46DR16640B/L датащи (HTML) - Integrated Silicon Solution, Inc


IS43/46DR16640B/L Информация о продукте

FEATURES
 Clock frequency up to 400MHz
 8 internal banks for concurrent operation
 4‐bit prefetch architecture
 Programmable CAS Latency: 3, 4, 5, 6 and 7
 Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
 Write Latency = Read Latency‐1
 Programmable Burst Sequence: Sequential or
Interleave
 Programmable Burst Length: 4 and 8
 Automatic and Controlled Precharge Command
 Power Down Mode
 Auto Refresh and Self Refresh
 Refresh Interval: 7.8 s (8192 cycles/64 ms)
 ODT (On‐Die Termination)
 Weak Strength Data‐Output Driver Option
 Bidirectional differential Data Strobe (Singleended
data‐strobe is an optional feature)
 On‐Chip DLL aligns DQ and DQs transitions with
CK transitions
 DQS# can be disabled for single‐ended data
strobe
 Read Data Strobe supported (x8 only)
 Differential clock inputs CK and CK#
 VDD and VDDQ = 1.8V ± 0.1V
 PASR (Partial Array Self Refresh)
 SSTL_18 interface
 tRAS lockout supported
 Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to
105°C)




Аналогичный номер детали - IS43/46DR16640B/L

производительномер деталидатащиподробное описание детали
logo
Integrated Silicon Solu...
IS43/46R16320D ISSI-IS43/46R16320D Datasheet
1Mb / 33P
16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
Rev.C 11/20/2012
IS43/46R32160D ISSI-IS43/46R32160D Datasheet
1Mb / 33P
16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
Rev.C 11/20/2012
IS43/46R86400D ISSI-IS43/46R86400D Datasheet
1Mb / 33P
16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
Rev.C 11/20/2012
IS43/46TR16128C ISSI-IS43/46TR16128C Datasheet
3Mb / 87P
256Mx8, 128Mx16 2Gb DDR3 SDRAM
Rev. E1 02/14/2018
IS43/46TR16128CL ISSI-IS43/46TR16128CL Datasheet
3Mb / 87P
256Mx8, 128Mx16 2Gb DDR3 SDRAM
Rev. E1 02/14/2018
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Аналогичное описание - IS43/46DR16640B/L

производительномер деталидатащиподробное описание детали
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Micon Design Technology...
MT41J256M4 MDTIC-MT41J256M4 Datasheet
8Mb / 181P
1Gb: x4, x8, x16 DDR3 SDRAM
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Integrated Silicon Solu...
IS43DR81280 ISSI-IS43DR81280 Datasheet
863Kb / 28P
1Gb (x8, x16) DDR2 SDRAM
IS43DR81280A ISSI-IS43DR81280A Datasheet
855Kb / 28P
1Gb (x8, x16) DDR2 SDRAM
IS43DR81280B ISSI-IS43DR81280B Datasheet
549Kb / 28P
1Gb (x8, x16) DDR2 SDRAM
IS43DR86400B ISSI-IS43DR86400B Datasheet
760Kb / 29P
512Mb (x8, x16) DDR2 SDRAM
IS43DR86400 ISSI-IS43DR86400 Datasheet
867Kb / 29P
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Micron Technology
MT47H64M16HR-25ELH MICRON-MT47H64M16HR-25ELH Datasheet
1Mb / 132P
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Integrated Silicon Solu...
IS43DR16320B-37CBLI ISSI-IS43DR16320B-37CBLI Datasheet
729Kb / 30P
512Mb (x8, x16) DDR2 SDRAM
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Micron Technology
MT47H16M16BG-3ITB MICRON-MT47H16M16BG-3ITB Datasheet
1Mb / 129P
256Mb: x4, x8, x16 DDR2 SDRAM
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Alliance Semiconductor ...
MT47H128M16PK-25E ALSC-MT47H128M16PK-25E Datasheet
2Mb / 133P
2Gb: x4, x8, x16 DDR2 SDRAM
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О Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.




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