FEATURES
● 650 V enhancement mode power transistor
● Bottom-cooled, 8x8 mm PDFN package
● RDS(on)(Typ) = 78 mΩ
● IDSmax,DC = 18 A / IDSmax,Pulse = 35 A
● Simple gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 V / +10 V)
● High switching frequency (> 1 MHz)
● Fast and controllable fall and rise times
● Reverse conduction capability
● Zero reverse recovery loss
● Source Sense (SS) pin for optimized gate drive
● ROHS Compliant
● Halogen-free
APPLICATIONS
● Consumer and Industrial Power Supplies
● Power Adapters
● LED Lighting Drivers
● Fast Battery Charging
● Power Factor Correction
● Appliance and Industrial Motor Drives
● Wireless Power Transfer