General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as solar power.

Features
 Low VCE(sat) Fast IGBT technology
 Low switching loss
 Maximum junction temperature 175oC
 VCE(sat) with positive temperature coefficient
 Very low reverse recovery loss based on SIC diode

Typical Applications
 Solar power
 UPS
 3-level-application