Features
■ A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip.
■ Can directly drive a power load from a CMOS or TTL logic.
■ Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
■ Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C)
■ Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
■ Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = 25°C)
■ “PS-8” package with embossed-tape packing.