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TDS4B212MX датащи (PDF) - Toshiba Semiconductor

TDS4B212MX Datasheet PDF - Toshiba Semiconductor
номер детали TDS4B212MX
скачать  TDS4B212MX скачать
объем файла   597.85 Kbytes
Page   13 Pages
производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
подробное описание детали CMOS Digital Integrated Circuits Silicon Monolithic

TDS4B212MX Datasheet (PDF)

Go To PDF Page скачать датащи
TDS4B212MX Datasheet PDF - Toshiba Semiconductor

номер детали TDS4B212MX
скачать  TDS4B212MX Click to download

объем файла   597.85 Kbytes
Page   13 Pages
производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
подробное описание детали CMOS Digital Integrated Circuits Silicon Monolithic

TDS4B212MX датащи (HTML) - Toshiba Semiconductor


TDS4B212MX Информация о продукте

Functional Description
• 1-32Gbps 1-Lane Two Differential Channel, 2:1 Mux/1:2 De-Mux
General
TDS4A212MX, TDS4B212MX are high-speed differential channel multiplexer(Mux)/demultiplexer(De-Mux)
switches. These devices are designed to support up to 32Gbps high-speed differential interface such as PCIe®
5.0, CXL 2.0, USB4® Version 2.0, ThunderboltTM 4, DisplayPortTM 2.0.
TDS4A212MX and TDS4B212MX have different pinout. TDS4B212MX has an optimized pinout to achieve high
frequency performance, on the other hand TDS4A212MX's pinout is easy to use for board layout.
The A Port (An+, An-) is connected to either the B Port (Bn+, Bn-) or C Port (Cn+, Cn-), which is determined by
the combination of both the select (SEL) and output enable (OE).When the output enable (OE) is held at a highlevel,
the switches are open (high-impedance state), regardless of the state of the select, thus these devices have
lower consumption current.
All pins are equipped with protection circuits to protect from electrostatic discharge damage.
Features
(1) Operating voltage: VCC = 1.6 to 3.6 V
(2) Low current consumption For active mode (Typ.) : Iope = 60 μA, For standby mode (Max) : ISTB = 10 μA
(3) -3-dB Bandwidth (differential) BW (Typ.) : TDS4B212MX = 27.5 GHz
TDS4A212MX = 26.2 GHz
(4) Differential insertion Loss DDIL (Typ.): TDS4B212MX = -0.9 dB @ f = 10 GHz, -1.4 dB @ f = 16 GHz
TDS4A212MX = -1.1 dB @ f = 10 GHz, -1.9 dB @ f = 16 GHz
(5) Differential return Loss DDRL (Typ.) : TDS4B212MX = -20 dB @ f = 10 GHz, -16 dB @ f = 16 GHz
TDS4A212MX = -17 dB @ f = 10 GHz, -18 dB @ f = 16 GHz
(6) Differential Off Isolation DDOIRR (Typ.) : TDS4B212MX = -16 dB @ f = 10 GHz, -14 dB @ f = 16 GHz
TDS4A212MX = -17 dB @ f = 10 GHz, -11 dB @ f = 16 GHz
(7) Differential Crosstalk DDXT (Typ.) : TDS4B212MX = -44 dB @ f = 10 GHz, -36 dB @ f = 16 GHz
TDS4A212MX = -32 dB @ f = 10 GHz, -30 dB @ f = 16 GHz
(8) Package: XQFN16
Applications
• PCIe 5.0/4.0
• CXL 2.0/1.0
• USB4 Version 2.0, Gen3/Gen2
• USB 3.2 Gen 2/Gen 1
• Thunderbolt 4
• DisplayPort 2.0/1.4
• SAS 3.0




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