Functional Description[1]
The CY7C1218H SRAM integrates 32K x 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

Features
• Registered inputs and outputs for pipelined operation
• 32K × 36 common I/O architecture
• 3.3V core power supply (VDD)
• 2.5V/3.3V I/O power supply (VDDQ)
• Fast clock-to-output times
   — 3.5 ns (for 166-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel® Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Available in JEDEC-standard lead-free 100-Pin TQFP package
• “ZZ” Sleep Mode Option