Distinctive characteristics
• CMOS 3.0 V core with versatile I/O
• 65 nm MIRRORBIT™ Eclipse technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature
- Wide I/O voltage range (VIO): 1.65 V to VCC
• ×16 data bus
• Asynchronous 32-byte page read
• 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
• Single word and multiple program on same word options
• Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction
• Sector erase
- Uniform 128-kbyte sectors
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine device status
• Advanced sector protection (ASP)
- Volatile and non-volatile protection methods for each sector
• Separate 1024-byte one time program (OTP) array with two lockable regions
• Common flash interface (CFI) parameter table
• Temperature range / grade
- Industrial (–40°C to +85°C)
- Industrial plus(–40°C to +105°C)
- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)
- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)
• 100,000 program / erase cycles
• 20 years data retention
• Packaging options
- 56-pin TSOP
- 64-ball LAA Fortified BGA, 13 mm × 11 mm
- 64-ball LAE Fortified BGA, 9 mm × 9 mm
- 56-ball VBU Fortified BGA, 9 mm × 7 mm