Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC015SMA070B4 device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 4-lead
package with a source sense.

Features
The following are key features of the MSC015SMA070B4 device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, T = 175 °C J(max)
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant

Benefits
The following are benefits of the MSC015SMA070B4 device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership

Applications
The MSC015SMA070B4 device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution