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MRF581A датащи (PDF) - Advanced Power Technology
MRF581A Datasheet PDF - Advanced Power Technology
номер детали MRF581A
скачать  MRF581A скачать
объем файла   282.49 Kbytes
Page   6 Pages
производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology
подробное описание детали RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581A Datasheet (PDF)

Go To PDF Page скачать датащи
MRF581A Datasheet PDF - Advanced Power Technology

номер детали MRF581A
скачать  MRF581A Click to download

объем файла   282.49 Kbytes
Page   6 Pages
производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology
подробное описание детали RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581A датащи (HTML) - Advanced Power Technology


MRF581A Информация о продукте

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Features
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package




Аналогичный номер детали - MRF581A

производительномер деталидатащиподробное описание детали
logo
Microsemi Corporation		 MRF581A MICROSEMI-MRF581A Datasheet
240Kb / 6P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
logo
New Jersey Semi-Conduct...		 MRF581A NJSEMI-MRF581A Datasheet
99Kb / 3P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
logo
Microsemi Corporation		 MRF581A MICROSEMI-MRF581A Datasheet
162Kb / 6P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF581AG MICROSEMI-MRF581AG Datasheet
162Kb / 6P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
More results


Аналогичное описание - MRF581A

производительномер деталидатащиподробное описание детали
logo
Microsemi Corporation		 2N6304 MICROSEMI-2N6304 Datasheet
86Kb / 4P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR91 MICROSEMI-BFR91 Datasheet
170Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFY90 MICROSEMI-BFY90 Datasheet
84Kb / 4P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559 MICROSEMI-MRF559 Datasheet
208Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5812 MICROSEMI-MRF5812 Datasheet
173Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5943 MICROSEMI-MRF5943 Datasheet
174Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
logo
Advanced Power Technolo...		 BFR90 ADPOW-BFR90 Datasheet
120Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR91 ADPOW-BFR91 Datasheet
120Kb / 5P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF8372 ADPOW-MRF8372 Datasheet
62Kb / 3P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF544 ADPOW-MRF544 Datasheet
302Kb / 4P		 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
More results




О Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.




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