RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts
    Output Power — 8 Watts
    Power Gain — 14 dB
    Efficiency — 70%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Excellent Thermal Stability
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.