Description
The PESDNC2FD12VBHD2 protects sensitive semiconductor components from damage or upset due to
electrostatic discharge (ESD) and other voltage induced transient events.
It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
They feature large cross-sectional area junctions for conducting high transient currents,
offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage.

Feature
 250W peak pulse power per line (tP = 8/20μs)
 DFN1006-2L package
 Replacement for MLV(0402)
 Bidirectional configurations
 Response time is typically < 1ns
 Low clamping voltage
 RoHS compliant
 Transient protection for data lines to
IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)

Applications
 Cellular phones
 Portable devices
 Digital cameras
Power supplies