FEATURES
► Internally matched and AC-coupled, 40 W, GaN power amplifier
► Integrated drain bias inductor
► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz
► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21
dBm)
► PAE: 39% typical from 2.3 GHz to 5.7 GHz
► VDD = 28 V at IDQ = 750 mA
► 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum
base
APPLICATIONS
► Military jammers
► Commercial and military radars
► Test and measurement equipment
GENERAL DESCRIPTION
The ADPA1113 is a gallium nitride (GaN), broadband power amplifier
delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency
(PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling
are required to achieve full-band operation. Additionally, no
external inductor is required to bias the amplifier.
The ADPA1113 is ideal for continuous wave applications, such as
military jammers and radars.