| производитель | номер детали | датащи | подробное описание детали |
ON Semiconductor |
NVMFWS1D5N08X
|
164Kb / 7P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A
April, 2023 - Rev. 0 |
|
NTMFS2D5N08X
|
146Kb / 6P |
MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A
October, 2023 - Rev. 0 |
|
NVMFWS1D9N08X
|
168Kb / 7P |
MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A
October, 2023 - Rev. 1 |
|
NVMFWS2D1N08X
|
258Kb / 8P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A
October, 2023 - Rev. 0 |
|
NTMFS3D0N08X
|
149Kb / 6P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.6 m, 154 A
November, 2023 - Rev. 0 |
|
NTMFS3D5N08X
|
147Kb / 7P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3 m, 135 A
November, 2023 - Rev. 1 |
|
NVMFWS2D5N08X
|
164Kb / 7P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.55 m, 156 A
November, 2023 - Rev. 0 |
|
NVMFWS3D0N08X
|
165Kb / 8P |
MOSFET - Power, Single N-Channel STD Gate, SO8FL 80 V, 3 m, 135 A
October, 2023 - Rev. 0 |
|
NTMFS4D0N08X
|
231Kb / 8P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A
December, 2023 - Rev. 0 |
|
NVMFWS3D5N08X
|
162Kb / 7P |
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A
December, 2023 - Rev. 0 |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
