| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
TGI0910-50
|
150Kb / 2P |
MICROWAVE POWER GaN HEMT
|
|
TGI8596-50
|
133Kb / 2P |
MICROWAVE POWER GaN HEMT
|
 M/A-COM Technology Solu... |
MAGX-001220-100L00
|
833Kb / 6P |
GaN HEMT Power Transistor
|
 Infineon Technologies A... |
1EDI20N12AF
|
1Mb / 22P |
Single Channel MOSFET and GaN HEMT Gate Driver IC
Rev. 2.0, 2015-06-01 |
 M/A-COM Technology Solu... |
NPA1008
|
1Mb / 11P |
GaN on Si HEMT D-Mode Integrated Amplifier
|
 Toshiba Semiconductor |
TGI7785-120L
|
629Kb / 6P |
MICROWAVE POWER GaN HEMT
2017 |
 DinTek Semiconductor Co... |
DTQ13N65GN
|
3Mb / 15P |
90mΩ, 650V GaN HEMT With Integrated Driver and Protection
|
|
DTQ35N65GN
|
2Mb / 15P |
450mΩ, 650V GaN HEMT With Integrated Driver and Protection
|
|
DTQ45N65GN
|
2Mb / 15P |
360mΩ, 650V GaN HEMT With Integrated Driver and Protection
|
|
DTQ75N65GN
|
1Mb / 15P |
180mΩ, 650V GaN HEMT With Integrated Driver and Protection
|