Darlington Complementary Silicon Power Transistors

Designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain −
    hFE = 2500 (Typ) @ IC
            = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
    VCEO(sus) = 80 Vdc (Min) − TIP131
                       = 100 Vdc (Min) − TIP132, TIP137
• Low Collector−Emitter Saturation Voltage −
    VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
                    = 3.0 Vdc (Max) @ IC = 6.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*