NCx57090y, NCx57091y are high−current single channel
IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,
designed for high system efficiency and reliability in high power
applications. The devices accept complementary inputs and depending
on the pin configuration, offer options such as Active Miller Clamp
(version A/D/F), negative power supply (version B) and separate high
and low (OUTH and OUTL) driver outputs (version C/E) for system
design convenience. The driver accommodate wide range of input
bias voltage and signal levels from 3.3 V to 20 V and they are
available in wide−body SOIC−8 package.

Features
• High Peak Output Current (+6.5 A/−6.5 A)
• Low Clamp Voltage Drop Eliminates the Need of Negative Power
Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
• Short Propagation Delays with Accurate Matching
• IGBT/MOSFET Gate Clamping during Short Circuit
• IGBT/MOSFET Gate Active Pull Down
• Tight UVLO Thresholds for Bias Flexibility
• Wide Bias Voltage Range including Negative VEE2 (Version B)
• 3.3 V, 5 V, and 15 V Logic Input
• 5 kVrms Galvanic Isolation
• High Transient Immunity
• High Electromagnetic Immunity
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant

Typical Applications
• Motor Control
• Uninterruptible Power Supplies (UPS)
• Automotive Applications
• Industrial Power Supplies
• Solar Inverters