| производитель | номер детали | датащи | подробное описание детали |
 NXP Semiconductors |
PSMN040-100MSE
|
355Kb / 13P |
N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications
26 March 2013 |
|
PSMN075-100MSE
|
365Kb / 13P |
N-channel 100 V 71 m standard level MOSFET in LFPAK33 designed specifically for PoE applications
26 March 2013 |
|
PSMN075-100MSE
|
365Kb / 13P |
N-channel 100 V 71 m廓 standard level MOSFET in LFPAK33 designed specifically for PoE applications
26 March 2013 |
 Nexperia B.V. All right... |
PSMN040-100MSE
|
776Kb / 13P |
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications
26 March 2013 |
|
PSMN041-100MSE
|
238Kb / 9P |
N-channel 100 V 42 mOhm standard level ASFET with enhanced SOA in LFPAK33 package. Designed specifically for high power PoE applications
21 July 2023 |
|
PSMN047-100NSE
|
320Kb / 12P |
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed specifically for high power PoE applications
31 July 2023 |
|
PSMN071-100NSE
|
326Kb / 12P |
N-channel 100 V, 82 mOhm standard level ‘ASFET with enhanced SOA’ in DFN2020 package, designed specifically for Power-over-ethernet (PoE) applications
21 July 2023 |
|
PSMN075-100MSE
|
915Kb / 13P |
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications
26 March 2013 |
|
PSMNR82-30YLE
|
315Kb / 13P |
N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
10 November 2022 |
|
PSMNR89-25YLE
|
320Kb / 13P |
N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
10 January 2023 |