Darlington Silicon Power Transistors

Designed for general−purpose amplifier and low speed switching applications.

• High DC Current Gain −
    hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
    VCEO(sus) = 60 Vdc (Min) − 2N6667
                       = 80 Vdc (Min) − 2N6668
• Low Collector−Emitter Saturation Voltage −
    VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388
• Pb−Free Packages are Available*