■ MEDIUM VOLTAGE CAPABILITY
■ NPN TRANSISTORS
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)

APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES

DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.