1. General description
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package
using advanced TrenchMOS Superjunction technology. This product has been designed and
qualified for high performance power switching applications.
2. Features and benefits
• 200 A continuous ID(max) rating
• Avalanche rated, 100% tested at IAS = 180 A
• Strong SOA (linear-mode) rating
• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
• Low QRR, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to
175 °C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints
• Low parasitic inductance and resistance
3. Applications
• High-performance synchronous rectification
• DC-to-DC converters
• High performance and high efficiency server power supply
• Brushless DC motor control
• Battery protection
• Load-switch and eFuse
• Inrush management, hotswap