1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Simple gate drive required due to low
gate charge
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC convertors
 Lithium-ion battery applications
 Notebook computers
 Portable equipment