1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 Ultra thin package profile with
0.37 mm height
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits