Description
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from
supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals, it may be suitable for other
applications at frequencies up to 5 GHz, restricted only by its maximum operating conditions.
Features
• GaN on SiC HEMT technology
• Operating frequency : up to 5 GHz
• P3dB : up to 10 W
• Supply voltage : up to 50 V
• Maximum junction temperature : 225 °C
• Pb-free and RoHS compliant