1. General description
The 74AUP2G132 is a dual 2-input NAND gate with Schmitt-trigger inputs. This device ensures
very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry
disables the output, preventing the potentially damaging backflow current through the device when
it is powered down.
2. Features and benefits
• Wide supply voltage range from 0.8 V to 3.6 V
• CMOS low power dissipation
• High noise immunity
• Low static power consumption; ICC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
• Overvoltage tolerant inputs to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial Power-down mode operation
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.65 V to 1.95 V)
• JESD8-5 (2.3 V to 2.7 V)
• JESD8C (2.7 V to 3.6 V)
• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• CDM JESD22-C101E exceeds 1000 V
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C
3. Applications
• Wave and pulse shaper
• Astable multivibrator
• Monostable multivibrator