Description
The GTVA212701FA is a 270-watt GaN on SiC high electron
mobility transistor (HEMT) for use in the 2110 to 2200 MHz
frequecy band. It features input matching, high efficiency,
and a thermally-enhanced earless package.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB),
2180 MHz, 48 V, 10 µs pulse width, 10% duty cycle
- Output power P3dB = 300 W
- Drain efficiency = 68.5%
- Gain = 17.5 dB
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @ 48 V, 56.2 W
(WCDMA) output power
• Low thermal resistance
• Pb-free and RoHS-compliant