Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high
electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features
input matching, high efficiency, and a thermally-enhanced
package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical Pulsed CW performance, 2690 MHz, 48 V,
combined outputs
- Output power at P3dB = 370 W
- Efficiency = 70%
- Gain = 15 dB
• Capable of handling 10:1 VSWR @48 V, 56 W (CW)
output power
• Human Body Model class 1A (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant