| производитель | номер детали | датащи | подробное описание детали |
 Mitsubishi Electric Sem... |
MGFC40V4450
|
192Kb / 2P |
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET
|
 Excelics Semiconductor,... |
EIB3439-4P
|
86Kb / 1P |
3.40-3.90 GHz 4W Internally Matched Power FET
|
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EIC2224-15
|
84Kb / 1P |
2.20- 2.40 GHz 15W Internally Matched Power FET
|
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EIC3135-8
|
86Kb / 1P |
3.10-3.50 GHz 8W Internally Matched Power FET
|
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EIC5359-10
|
84Kb / 1P |
5.30-5.90 GHz 10W Internally Matched Power FET
|
 M/A-COM Technology Solu... |
MAGX-001214-500L00
|
213Kb / 8P |
GaN on SiC Depletion-Mode Transistor Technology Internally Matched
|
 TriQuint Semiconductor |
QPD2195
|
1Mb / 12P |
400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
|
 Qorvo, Inc |
TGF2965-SM
|
1Mb / 21P |
5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor
|
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QPD1881L
|
1Mb / 18P |
400 W, 50 V, 2.7 ??2.9 GHz, GaN RF Power Transistor
|
 WOLFSPEED, INC. |
CGHV35400F1
|
1Mb / 21P |
400 W, 2.9 - 3.5 GHz, GaN HEMT
Rev. 1.0, 2022-8-4 |