FEATURES
·Multilayer Metal -Silicon Potential Structure.
·Low Leakage Current.
·High Current Capability, High Efficiency.
·High Junction Temperature Capability.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
MECHANICAL CHARACTERISTICS
·Low Voltage High Frequency Switching Power Supply.
·Low Voltage High Frequency Invers Circuit.
·Low Voltage Continued Circuit and Protection Circuit.