Description
Cree’s CG2H30070F is an internally matched gallium nitride
(GaN) high electron mobility transistor (HEMT). The CG2H30070F,
operating from a 28 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities
making the CG2H30070F ideal for linear and compressed amplifier
circuits. The transistor is available in a flange package
Features
• 0.5 - 3.0 GHz Application Circuit
• 85 W POUT typical at 28 V
• 10 dB Power Gain
• 58% Drain Efficiency
• Internally Matched
Applications
• Broadband Amplifiers
• Electronic Counter Measures
• Signal Jamming
• Milcom
• Radar
• Data Link