| производитель | номер детали | датащи | подробное описание детали |
NXP Semiconductors |
PDTC123E
|
91Kb / 14P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
2004 Aug 06 |
|
PDTD113E
|
67Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
Rev. 01-14 April 2005 |
|
PEMH20
|
52Kb / 9P |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
Rev. 03-14 February 2005 |
|
PDTB123T
|
128Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
|
PDTD123E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
|
PDTD123T
|
129Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
|
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
|
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
|
PDTD123T
|
129Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009 |
Nexperia B.V. All right... |
PDTD123T_SER
|
243Kb / 11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 03 - 16 November 2009 |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
