DESCRIPTION
The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT-
2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power (CW) with high linear
gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3
GHz. The device employs 0.7 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation
for superior performance, thermal characteristics, and reliability.
FEATURES
• Push-pull type GaAs FET
• VDS = 12.0 V operation
• High output power: Pout = 45 W TYP.
• High linear gain: GL = 12.0 dB TYP.
• High power added efficiency: hadd = 40% TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHz
• Hollow plastic package