GENERAL PURPOSE N-CHANNEL GaAs MES FET

DESCRIPTION
NE76038 is a N-channel GaAs MES FET housed in
plastic package. The device is fabricated by ion implantation
for improved RF and DC performance reliability and uniformity.
Its excellent low noise and high associated gain make
it suitable for MMDS, TVRO, GPS and another commercial
systems.
The surface of the device, except bonding pads, is
passivated with SiO2 and SiN4 for scratch protection as well
as surface stability.
FEATURES
• Low noise figure & High associated gain
NF = 1.7 dB TYP., Ga = 7.5 dB TYP. at f = 12 GHz
• 0.3 mm recessed gate
• Plastic package
• Tape & Reel Packaging only Available