1. General description
PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBSS4350T

2. Features and benefits
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation

3. Applications
• Power management applications
• Low and medium power DC/DC converters
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out (LDO)